Newer nonvolatile memory (NVM) technologies are poised to take over from flash in embedded applications on newer process ...
In a recently published article in IEEE Electron Devices Magazine the authors, I was one of them, looked at the impact of external magnetic fields on spin tunnel torque magnetic random-access memories ...
Renesas Electronics Corp. has developed two new circuit technologies for an embedded spin-transfer torque magnetoresistive random-access memory (STT-MRAM) test chip with fast read and write ...
Marvell announced a Compute Express Link (CXL) development platform for multi-host memory pooling for cloud data center operators and server OEMs. This platform combines Marvell’s CXL technology with ...
A technical paper titled “Impact of external magnetic fields on STT-MRAM” was recently published by researchers at Univ. Grenoble Alpes, Everspin, GlobalFoundries, imec, et al. “This application note ...
CHANDLER, Ariz.--(BUSINESS WIRE)--Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions ...
A prototype MCU test chip with a 10.8 Mbit magnetoresistive random-access memory (MRAM) memory cell array—fabricated on a 22-nm embedded MRAM process—claims to accomplish a random read access ...
FREMONT, Calif. & HSINCHU, Taiwan--(BUSINESS WIRE)--Avalanche Technology, the leader in next generation MRAM technology, and United Microelectronics Corporation (NYSE: UMC; TWSE: 2303) (“UMC”), a ...
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